Abstract
We compare directly the rates of bulk versus surface transport for Ni in and on Si(111) by depositing a laterally confined dot of Ni on one side of a double-polished and UHV cleaned Si wafer and then measuring the lateral Auger profile on the reverse side following annealing and quenching. Ni reaches the far side of the wafer at temperatures as low as 550°C via bulk diffusion with no measurable contribution from surface paths, which are short circuited by numerous, fast bulk paths. Similar results are found for Ni and Co on Si(111) and Si(100). Implications for silicide reactions in general are described.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4460-4463 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 75 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1995 |
ASJC Scopus subject areas
- General Physics and Astronomy