Bulk versus surface transport of nickel and cobalt on silicon

M. Y. Lee, Peter Bennett

Research output: Contribution to journalArticlepeer-review

70 Scopus citations


We compare directly the rates of bulk versus surface transport for Ni in and on Si(111) by depositing a laterally confined dot of Ni on one side of a double-polished and UHV cleaned Si wafer and then measuring the lateral Auger profile on the reverse side following annealing and quenching. Ni reaches the far side of the wafer at temperatures as low as 550°C via bulk diffusion with no measurable contribution from surface paths, which are short circuited by numerous, fast bulk paths. Similar results are found for Ni and Co on Si(111) and Si(100). Implications for silicide reactions in general are described.

Original languageEnglish (US)
Pages (from-to)4460-4463
Number of pages4
JournalPhysical Review Letters
Issue number24
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Bulk versus surface transport of nickel and cobalt on silicon'. Together they form a unique fingerprint.

Cite this