Abstract
This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.
Original language | English (US) |
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Pages (from-to) | 1635-1639 |
Number of pages | 5 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 24 |
Issue number | 5 |
DOIs | |
State | Published - May 2013 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering