@inproceedings{33f6535e285946deb5c7018db0e25b8e,
title = "Band alignment and carrier recombination in GaAsSb/GaAs quantum wells",
abstract = "Using a combination of experimental and theoretical techniques, we investigated the band alignment and the carrier recombination processes occurring in GaAsSb/GaAs structures. We find that for Sb fractions ∼30%, the band alignment is slightly type II. From studies on lasers based upon this material we show that at the high carrier densities required to achieve threshold, at room temperature, the devices are dominated by carrier leakage and non-radiative Auger recombination.",
keywords = "Band alignment, Carrier recombination, GaAsSb, Optical communications, Semiconductor laser, VCSEL",
author = "K. Hild and Sweeney, {S. J.} and Jin, {S. R.} and Healy, {S. B.} and O'Reilly, {E. P.} and Shane Johnson and Wang, {J. B.} and Yong-Hang Zhang",
year = "2007",
doi = "10.1063/1.2730443",
language = "English (US)",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "1431--1432",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}