A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.

Original languageEnglish (US)
Article number6476764
Pages (from-to)1599-1607
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number4
StatePublished - 2013


  • Backgate bias
  • envelope tracking
  • silicon-on-insulator (SOI) MESFET

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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