Backgate modulation technique for higher efficiency envelope tracking

M. Reza Ghajar; Seth J. Wilk; William Lepkowski; Bertan Bakkaloglu; Trevor Thornton

doi:10.1109/TMTT.2013.2247616

Backgate modulation technique for higher efficiency envelope tracking

M. Reza Ghajar, Seth J. Wilk, William Lepkowski, Bertan Bakkaloglu, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.

Original language	English (US)
Article number	6476764
Pages (from-to)	1599-1607
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	61
Issue number	4
DOIs	https://doi.org/10.1109/TMTT.2013.2247616
State	Published - 2013

Keywords

Backgate bias
envelope tracking
silicon-on-insulator (SOI) MESFET

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2013.2247616

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title = "Backgate modulation technique for higher efficiency envelope tracking",

abstract = "A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.",

keywords = "Backgate bias, envelope tracking, silicon-on-insulator (SOI) MESFET",

author = "Ghajar, {M. Reza} and Wilk, {Seth J.} and William Lepkowski and Bertan Bakkaloglu and Trevor Thornton",

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T1 - Backgate modulation technique for higher efficiency envelope tracking

AU - Ghajar, M. Reza

AU - Wilk, Seth J.

AU - Lepkowski, William

AU - Bakkaloglu, Bertan

AU - Thornton, Trevor

PY - 2013

Y1 - 2013

N2 - A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.

AB - A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.

KW - Backgate bias

KW - envelope tracking

KW - silicon-on-insulator (SOI) MESFET

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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ER -

Backgate modulation technique for higher efficiency envelope tracking

Abstract

Keywords

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