Abstract
The atomically resolved structure of misfit dislocations (MDs) at heterovalent II-VI/III-V (001) compound semiconductor interfaces has been determined using aberration-corrected electron microscopy. The MDs at an ZnTe/InAs interface, which has small lattice mismatch (Δa/a ∼0.74%), are primarily 60° glide-set dislocations, with unpaired atomic columns at the dislocation cores mostly containing indium. Lomer dislocations observed at the ZnTe/InP interface (Δa/a ∼3.85%) consist of a 10-atom ring and two 5-atom rings, whereas shuffle-set Lomer dislocations observed at the ZnTe/GaAs interface (Δa/a ∼7.4%) have symmetrical 5/7-atom ring structures, although asymmetrical and disordered Lomer core structures are sometimes observed. Intensity line profiles across defect-free regions of the heterointerfaces indicate substantial interfacial intermixing. Thus, unpaired atomic columns at the MD cores are likely to consist of mixed atomic species.
Original language | English (US) |
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Pages (from-to) | 2573-2579 |
Number of pages | 7 |
Journal | ACS Applied Electronic Materials |
Volume | 3 |
Issue number | 6 |
DOIs | |
State | Published - Jun 22 2021 |
Keywords
- aberration-corrected electron microscopy
- compound semiconductors
- heterovalent interface
- interdiffusion
- lattice mismatch
- misfit dislocation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrochemistry
- Materials Chemistry