Atomic ordering in AlxGa1-xN thin-films

A. T. Wise, D. W. Kim, Nathan Newman, S. Mahajan

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalScripta Materialia
Issue number2
StatePublished - Jan 2006


  • CVD
  • Compound semiconductors
  • Ordering
  • STEM
  • Single crystal growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


Dive into the research topics of 'Atomic ordering in AlxGa1-xN thin-films'. Together they form a unique fingerprint.

Cite this