Abstract
The parallel and perpendicular displacements of atoms in the first few layers of Si(111)-(7×7) have been determined with use of ion scattering. It was directly observed that the major reconstruction of this surface involves 0.4 displacements perpendicular to the surface.
Original language | English (US) |
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Pages (from-to) | 2043-2046 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 45 |
Issue number | 25 |
DOIs | |
State | Published - Jan 1 1980 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy