Atomic arrangement at the AlN/Si(110) interface

Oscar E. Contreras; Francisco Ruiz-Zepeda; Armin Dadgar; Alois Krost; Fernando Ponce

doi:10.1143/APEX.1.061104

Atomic arrangement at the AlN/Si(110) interface

Oscar E. Contreras, Francisco Ruiz-Zepeda, Armin Dadgar, Alois Krost, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AIN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si Interface taken along the 〈11 2̄0〉_AlN // 〈 11̄0〉 _Si and 〈11̄00〉_AlN // 〈001 〉_Si projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between (1̄00)_AlN and (001) _Si planes Is observed. The atomic bonding configuration at the AIN/SI interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.

Original language	English (US)
Pages (from-to)	611041-611043
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	6
DOIs	https://doi.org/10.1143/APEX.1.061104
State	Published - Jun 1 2008

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Atomic arrangement at the AlN/Si(110) interface",

abstract = "GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AIN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si Interface taken along the 〈11 {\=2}0〉AlN // 〈 1{\=1}0〉 Si and 〈1{\=1}00〉AlN // 〈001 〉Si projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between ({\=1}00)AlN and (001) Si planes Is observed. The atomic bonding configuration at the AIN/SI interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.",

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T1 - Atomic arrangement at the AlN/Si(110) interface

AU - Contreras, Oscar E.

AU - Ruiz-Zepeda, Francisco

AU - Dadgar, Armin

AU - Krost, Alois

AU - Ponce, Fernando

PY - 2008/6/1

Y1 - 2008/6/1

N2 - GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AIN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si Interface taken along the 〈11 2̄0〉AlN // 〈 11̄0〉 Si and 〈11̄00〉AlN // 〈001 〉Si projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between (1̄00)AlN and (001) Si planes Is observed. The atomic bonding configuration at the AIN/SI interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.

AB - GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AIN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si Interface taken along the 〈11 2̄0〉AlN // 〈 11̄0〉 Si and 〈11̄00〉AlN // 〈001 〉Si projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between (1̄00)AlN and (001) Si planes Is observed. The atomic bonding configuration at the AIN/SI interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.

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Atomic arrangement at the AlN/Si(110) interface

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