Assessing TiOxas a hole-selective contact for silicon heterojunction solar cells

David Quispe; Brian J. Coppa; Ty Newhouse-Illige; Peter Firth; Zachary C. Holman

doi:10.1109/PVSC43889.2021.9518968

Assessing TiO_xas a hole-selective contact for silicon heterojunction solar cells

David Quispe, Brian J. Coppa, Ty Newhouse-Illige, Peter Firth, Zachary C. Holman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Transparent materials with tunable work functions are attractive for carrier-selective contacts with minimal current loss caused by parasitic absorption. We investigate the viability of TiOx, deposited using a novel aerosol-based tool, as a wide-bandgap hole-selective contact to replace p-type amorphous silicon in silicon heterojunction solar cells. Cells with a TiOx hole contact and no intrinsic amorphous silicon passivation layer achieve contact resistivities as low as 0.1 Ωcm2 but have low implied open-circuit voltages, resulting in cell efficiencies as high as 14.7%. Including the passivation layer increases the implied open-circuit voltage to above 720 mV but markedly reduces the contact's selectivity.

Original language	English (US)
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1492-1494
Number of pages	3
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518968
State	Published - Jun 20 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: Jun 20 2021 → Jun 25 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	6/20/21 → 6/25/21

Keywords

carrier-selective contact
contact resistivity
silicon heterojunction solar cell
TiOx

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC43889.2021.9518968

Cite this

Quispe, D., Coppa, B. J., Newhouse-Illige, T., Firth, P., & Holman, Z. C. (2021). Assessing TiO_xas a hole-selective contact for silicon heterojunction solar cells. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (pp. 1492-1494). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518968

Assessing TiO_xas a hole-selective contact for silicon heterojunction solar cells. / Quispe, David; Coppa, Brian J.; Newhouse-Illige, Ty et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1492-1494 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Quispe, D, Coppa, BJ, Newhouse-Illige, T, Firth, P & Holman, ZC 2021, Assessing TiO_xas a hole-selective contact for silicon heterojunction solar cells. in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1492-1494, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 6/20/21. https://doi.org/10.1109/PVSC43889.2021.9518968

Quispe D, Coppa BJ, Newhouse-Illige T, Firth P, Holman ZC. Assessing TiO_xas a hole-selective contact for silicon heterojunction solar cells. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1492-1494. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518968

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abstract = "Transparent materials with tunable work functions are attractive for carrier-selective contacts with minimal current loss caused by parasitic absorption. We investigate the viability of TiOx, deposited using a novel aerosol-based tool, as a wide-bandgap hole-selective contact to replace p-type amorphous silicon in silicon heterojunction solar cells. Cells with a TiOx hole contact and no intrinsic amorphous silicon passivation layer achieve contact resistivities as low as 0.1 Ωcm2 but have low implied open-circuit voltages, resulting in cell efficiencies as high as 14.7%. Including the passivation layer increases the implied open-circuit voltage to above 720 mV but markedly reduces the contact's selectivity. ",

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