Abstract
Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.
Original language | English (US) |
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Pages (from-to) | 688-690 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 6 |
DOIs | |
State | Published - 1991 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)