Anomalous LO phonon lifetime in AlAs

M. Canonico, C. Poweleit, Jose Menendez, A. Debernardi, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The frequency and linewidth of the Raman-activated longitudinal optical (LO) phonons was measured as a function of temperature in the compounds GaAs and AlAs. The low-temperature lifetime of the LO phonon in AlAs and GaAs were found to be 9.7 ps and 9.5 ps respectively, which contradicted earlier predictions. The theoretical and experimental results showed agreement when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states was taken into account.

Original languageEnglish (US)
Article number215502
Pages (from-to)2155021-2155024
Number of pages4
JournalPhysical Review Letters
Issue number21
StatePublished - May 27 2002

ASJC Scopus subject areas

  • General Physics and Astronomy


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