Abstract
Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.
Original language | English (US) |
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Pages (from-to) | 149-159 |
Number of pages | 11 |
Journal | Thin Solid Films |
Volume | 94 |
Issue number | 2 |
DOIs | |
State | Published - Aug 13 1982 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry