Anisotropic electrical properties of NiOx /β-Ga2O3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Dinusha Herath Mudiyanselage; Ramandeep Mandia; Dawei Wang; Jayashree Adivarahan; Ziyi He; Kai Fu; Yuji Zhao; Martha McCartney; David J. Smith; Houqiang Fu

doi:10.35848/1882-0786/acf8ad

Anisotropic electrical properties of NiO_x /β-Ga₂O₃ p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Dinusha Herath Mudiyanselage, Ramandeep Mandia, Dawei Wang, Jayashree Adivarahan, Ziyi He, Kai Fu, Yuji Zhao, Martha McCartney, David J. Smith, Houqiang Fu

Physics

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2 Scopus citations

Abstract

NiO_x/β-Ga₂O₃ p-n heterojunctions fabricated on (201 ̅), (001), and (010) β-Ga₂O₃ substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification 10⁹, and turn-on voltages >2.0 V. The (010) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with (201 ̅) and (001) devices. Moreover, it is calculated that the interface trap state densities for (201 ̅), (001), and (010) plane devices are 4.3 × 10¹⁰, 7.4 × 10¹⁰, and 1.6 × 10¹¹ eV^–1cm^–2, respectively. These differences in the NiO_x/β-Ga₂O₃ heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

Original language	English (US)
Article number	094002
Journal	Applied Physics Express
Volume	16
Issue number	9
DOIs	https://doi.org/10.35848/1882-0786/acf8ad
State	Published - Sep 1 2023

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Anisotropic electrical properties of NiOx /β-Ga2O3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations",

abstract = "NiOx/β-Ga2O3 p-n heterojunctions fabricated on (201 ̅), (001), and (010) β-Ga2O3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification 109, and turn-on voltages >2.0 V. The (010) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with (201 ̅) and (001) devices. Moreover, it is calculated that the interface trap state densities for (201 ̅), (001), and (010) plane devices are 4.3 × 1010, 7.4 × 1010, and 1.6 × 1011 eV–1cm–2, respectively. These differences in the NiOx/β-Ga2O3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.",

author = "Mudiyanselage, {Dinusha Herath} and Ramandeep Mandia and Dawei Wang and Jayashree Adivarahan and Ziyi He and Kai Fu and Yuji Zhao and Martha McCartney and Smith, {David J.} and Houqiang Fu",

year = "2023",

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doi = "10.35848/1882-0786/acf8ad",

language = "English (US)",

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journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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T1 - Anisotropic electrical properties of NiOx /β-Ga2O3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

AU - Mudiyanselage, Dinusha Herath

AU - Mandia, Ramandeep

AU - Wang, Dawei

AU - Adivarahan, Jayashree

AU - He, Ziyi

AU - Fu, Kai

AU - Zhao, Yuji

AU - McCartney, Martha

AU - Smith, David J.

AU - Fu, Houqiang

PY - 2023/9/1

Y1 - 2023/9/1

N2 - NiOx/β-Ga2O3 p-n heterojunctions fabricated on (201 ̅), (001), and (010) β-Ga2O3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification 109, and turn-on voltages >2.0 V. The (010) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with (201 ̅) and (001) devices. Moreover, it is calculated that the interface trap state densities for (201 ̅), (001), and (010) plane devices are 4.3 × 1010, 7.4 × 1010, and 1.6 × 1011 eV–1cm–2, respectively. These differences in the NiOx/β-Ga2O3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

AB - NiOx/β-Ga2O3 p-n heterojunctions fabricated on (201 ̅), (001), and (010) β-Ga2O3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification 109, and turn-on voltages >2.0 V. The (010) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with (201 ̅) and (001) devices. Moreover, it is calculated that the interface trap state densities for (201 ̅), (001), and (010) plane devices are 4.3 × 1010, 7.4 × 1010, and 1.6 × 1011 eV–1cm–2, respectively. These differences in the NiOx/β-Ga2O3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

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Anisotropic electrical properties of NiO_x /β-Ga₂O₃ p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

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