@inproceedings{a8fd3749e23f401a8deb0a02dfe9c849,
title = "Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction",
abstract = "The convergent beam electron diffraction (CBED) technique of transmission electron microscopy (TEM) has excellent capabilities for strain detection at high spatial resolution. Here we report strain measurements in bulk ε-Si/SiGe/Si and in a strained 35nm PMOS device in which SiGe acts as the source and drain. CBED measurements of the composition of the relaxed SiGe buffer are in quantitative agreement with Raman spectroscopy. For the PMOS device, CBED measured a uniaxial compressive stress of 1.12GPa in the channel. However, it was found that even in the cross-sectional TEM samples with thicknesses greater than 300nm, the intrinsic surface strain relaxation was often so severe that no recognizable high-order Laue zone lines in the CBED patterns could be collected. The amorphorization of both free surfaces of the TEM sample to a range of about 80nm is proposed to minimize the impact of surface strain relaxation for future studies. Copyright The Electrochemical Society.",
author = "Peng Zhang and Istratov, {Andrei A.} and Haifeng He and Ager, {Joel W.} and Chris Nelson and Eric Stach and John Mardinly and Christian Kisielowski and Weber, {Eicke R.} and Spence, {John C.H.}",
year = "2006",
doi = "10.1149/1.2195691",
language = "English (US)",
isbn = "156677439X",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "559--568",
booktitle = "Silicon Materials Science and Technology X",
edition = "2",
note = "10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",
}