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Dive into the research topics of 'An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology'. Together they form a unique fingerprint.- Sort by
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A. Cagri Ulusoy, Robert L. Schmid, Saeed Zeinolabedinzadeh, Wasif T. Khan, Mehmet Kaynak, Bernd Tillack, John D. Cressler
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution