An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology

A. Cagri Ulusoy, Robert L. Schmid, Saeed Zeinolabedinzadeh, Wasif T. Khan, Mehmet Kaynak, Bernd Tillack, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

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Engineering & Materials Science