Abstract
Techniques for modeling radiation-induced junction photocurrents often rely on assumptions that require the device remain in low-level injection; however transient radiation events can induce high-level injection conditions. Due to a combination of physical accuracy and computational efficiency, analytical models are often preferred to empirical and numerical modeling techniques. A more thorough understanding of the physical response can help improve the efficacy of simple modeling techniques, e.g. equivalent circuit modeling. This work explores the fundamental physical response of a p-n junction as it approaches, and after it reaches high-level injection (HLI) conditions through analysis of TCAD simulations. From the TCAD simulations and experimentally obtained data, this physical response is presented as a simple equivalent circuit model that acts as a hybrid between numerical and empirical modeling methodologies.
Original language | English (US) |
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Article number | 6678663 |
Pages (from-to) | 4570-4575 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 60 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2013 |
Keywords
- High-level injection
- p-n junction
- photocurrent
- single-event effects
- single-event transient
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering