Abstract
We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 197-200 |
| Number of pages | 4 |
| Journal | Journal of Computational Electronics |
| Volume | 8 |
| Issue number | 3-4 |
| State | Published - Dec 1 2009 |
Keywords
- Effective potentials
- MOSFET quantum effects
- Monte carlo simulation
- Quantum thermodynamics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering