Abstract
We characterize a-Si:H(i)/a-Si:H(n)/Al and a-Si:H(i)/a-Si:H(p)/Al contacts implemented on the rear side of silicon heterojunction solar cells. Electrical test structures and full-area solar cells employing these contacts demonstrate promising performance. For example, a-Si:H(i)/a-Si:H(p)/Al test structures with a 40 nm thick a-Si:H(p) layer that were annealed at 180 ◦C had contact resistivities of 48 mΩ·cm2 and implied open-circuit voltage losses after metallization of only 9 mV. Similarly, solar cells with full-area rear a-Si:H(i)/a-Si:H(n)/Al contacts that were annealed at 150 ◦C had open-circuit voltages of 717 mV and contact resistivities of 9.4 mΩ·cm2. For thinner doped a-Si:H layers and higher annealing temperatures, the contacts become less stable and performance degrades. Complementary transmission electron microscopy and energy-dispersive x-ray spectroscopy analysis show the Al–Si interactions at these interfaces that explain the range of exhibited performance. This analysis leads to a better understanding of the materials properties limiting the contact stability.
Original language | English (US) |
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Article number | 134002 |
Journal | Journal of Physics D: Applied Physics |
Volume | 54 |
Issue number | 13 |
DOIs | |
State | Published - Apr 1 2021 |
Keywords
- Amorphous silicon
- Crystalline silicon
- Photovoltaic metallization
- Silicon heterojunction solar cells
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films