AlN MSM and Schottky photodetectors

R. Dahal, J. Li, Z. Y. Fan, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalConference articlepeer-review

15 Scopus citations


Deep ultraviolet (DUV) AlN Metal-Semiconductor-Metal (MSM) and Schottky barrier photodetectors have been demonstrated by exploiting the epitaxial growth of high quality AlN epilayer on sapphire and n-SiC substrates, respectively. The fabricated photodetectors exhibited peak responsivity at 200 nm with very sharp cut-off wavelength at 207 nm along with extremely low dark current, very high breakdown voltages, high responsivity and high DUV to UV/visible rejection ratio. AlN Schottky barrier detectors show high zero bias responsivity and very high thermal energy limited detectivity at zero bias. These outstanding features are direct attributes of the fundamental material properties and high quality of AlN epilayers. These results demonstrated that AlN could be an excellent candidate as an active material for next generation DUV opto-electronic device applications.

Original languageEnglish (US)
Pages (from-to)2148-2151
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
StatePublished - 2008
Externally publishedYes
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

ASJC Scopus subject areas

  • Condensed Matter Physics


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