TY - JOUR
T1 - All-semiconductor active plasmonic system in mid-infrared wavelengths
AU - Li, Debin
AU - Ning, Cun-Zheng
PY - 2011/7/18
Y1 - 2011/7/18
N2 - Metal-based plasmonics has a wide range of important applications but is subject to several drawbacks. In this paper, we propose and investigate an all-semiconductor-based approach to plasmonics in mid-infrared (MIR) wavelength range using InAs heterostructures. Our results show that InAs heterostructures are ideal for plasmonics with the shortest plasmon wavelength among common semiconductors. More importantly, as we will show, InAs heterostructures are superior to metal-based plasmonics for MIR applications due to much reduced loss, improved confinement, and ease of tunability of resonant wavelengths through carrier density. Finally, we propose and investigate a monolithic all-semiconductor integrated active plasmonic system with active source, waveguide, and detector all integrated on a chip, realizable in a single epitaxial growth process. Such an all semiconductor based system can be advantageous not only in plasmonics, but also in active metamaterials.
AB - Metal-based plasmonics has a wide range of important applications but is subject to several drawbacks. In this paper, we propose and investigate an all-semiconductor-based approach to plasmonics in mid-infrared (MIR) wavelength range using InAs heterostructures. Our results show that InAs heterostructures are ideal for plasmonics with the shortest plasmon wavelength among common semiconductors. More importantly, as we will show, InAs heterostructures are superior to metal-based plasmonics for MIR applications due to much reduced loss, improved confinement, and ease of tunability of resonant wavelengths through carrier density. Finally, we propose and investigate a monolithic all-semiconductor integrated active plasmonic system with active source, waveguide, and detector all integrated on a chip, realizable in a single epitaxial growth process. Such an all semiconductor based system can be advantageous not only in plasmonics, but also in active metamaterials.
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U2 - 10.1364/OE.19.014594
DO - 10.1364/OE.19.014594
M3 - Article
C2 - 21934822
AN - SCOPUS:79960509671
SN - 1094-4087
VL - 19
SP - 14594
EP - 14603
JO - Optics Express
JF - Optics Express
IS - 15
ER -