AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance

E. Vadiee, E. Renteria, C. Zhang, J. J. Williams, A. Mansoori, S. Addamane, G. Balakrishnan, Christiana Honsberg

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of AlxGa1-xSb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of AlxGa1-xSb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Alx Ga1xSb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al0.15Ga0.85Sb, and Al0.5Ga0.5Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.

Original languageEnglish (US)
Article number8063407
Pages (from-to)1795-1801
Number of pages7
JournalIEEE Journal of Photovoltaics
Issue number6
StatePublished - Nov 2017


  • Aluminum gallium antimonide
  • epitaxial layers
  • high lattice mismatch
  • misfit dislocation
  • single-junction solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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