TY - GEN
T1 - AlGaSb based solar cells grown on GaAs by molecular beam epitaxy
AU - Vadiee, Ehsan
AU - Zhang, Chaomin
AU - Faleev, Nikolai N.
AU - Addamane, Sadhvikas
AU - Wang, Shuo
AU - Ponce, Fernando
AU - Balakrishnan, Ganesh
AU - Honsberg, Christiana
N1 - Funding Information:
This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy. We also gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.
AB - A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.
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U2 - 10.1109/PVSC.2017.8366529
DO - 10.1109/PVSC.2017.8366529
M3 - Conference contribution
AN - SCOPUS:85048484293
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 1498
EP - 1503
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -