AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy

Ehsan Vadiee; Chaomin Zhang; Nikolai N. Faleev; Sadhvikas Addamane; Shuo Wang; Fernando Ponce; Ganesh Balakrishnan; Christiana Honsberg

doi:10.1109/PVSC.2016.7750050

AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy

Ehsan Vadiee, Chaomin Zhang, Nikolai N. Faleev, Sadhvikas Addamane, Shuo Wang, Fernando Ponce, Ganesh Balakrishnan, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2313-2316
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750050
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7750050

Cite this

Vadiee, E., Zhang, C., Faleev, N. N., Addamane, S., Wang, S., Ponce, F., Balakrishnan, G., & Honsberg, C. (2016). AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2313-2316). Article 7750050 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750050

AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. / Vadiee, Ehsan; Zhang, Chaomin; Faleev, Nikolai N. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2313-2316 7750050 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Vadiee, E, Zhang, C, Faleev, NN, Addamane, S, Wang, S, Ponce, F, Balakrishnan, G & Honsberg, C 2016, AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7750050, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 2313-2316, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750050

Vadiee E, Zhang C, Faleev NN, Addamane S, Wang S, Ponce F et al. AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2313-2316. 7750050. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7750050

@inproceedings{1cc26df3eae1418983e6e76dc7bfd010,

title = "AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy",

abstract = "A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.",

author = "Ehsan Vadiee and Chaomin Zhang and Faleev, {Nikolai N.} and Sadhvikas Addamane and Shuo Wang and Fernando Ponce and Ganesh Balakrishnan and Christiana Honsberg",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750050",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2313--2316",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

}

TY - GEN

T1 - AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy

AU - Vadiee, Ehsan

AU - Zhang, Chaomin

AU - Faleev, Nikolai N.

AU - Addamane, Sadhvikas

AU - Wang, Shuo

AU - Ponce, Fernando

AU - Balakrishnan, Ganesh

AU - Honsberg, Christiana

PY - 2016/11/18

Y1 - 2016/11/18

N2 - A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.

AB - A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.

UR - http://www.scopus.com/inward/record.url?scp=85003666881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003666881&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7750050

DO - 10.1109/PVSC.2016.7750050

M3 - Conference contribution

AN - SCOPUS:85003666881

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2313

EP - 2316

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this