AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers

Z. Y. Fan, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


AlGaNGaNAlN quantum-well field-effect transistors have been demonstrated. By replacing a semi-insulating GaN epilayer with a highly resistive AlN epilayer in the device structure, parasitic conduction in the GaN epilayer, leakage current through the GaN epilayer, and the channel electrons spillover into the GaN epilayer have been completely eliminated and the drain current collapse has been reduced. The fabricated devices on sapphire substrate with 1 μm gate length show a high saturation current (>1 Amm), and excellent gate control capability with a pinch-off voltage of -6 V. Even without passivation, the devices exhibit small drain current collapse (<10%) under 1 μs pulse gate driving.

Original languageEnglish (US)
Article number073513
JournalApplied Physics Letters
Issue number7
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers'. Together they form a unique fingerprint.

Cite this