Advances in Si-Ge-Sn materials science and technology

John Kouvetakis; John Tolle; Jose Menendez; V. R. D'Costa

Advances in Si-Ge-Sn materials science and technology

John Kouvetakis, John Tolle, Jose Menendez, V. R. D'Costa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.

Original language	English (US)
Title of host publication	IEEE International Conference on Group IV Photonics GFP
Pages	201-203
Number of pages	3
State	Published - 2007
Event	2007 4th International Conference on Group IV Photonics, GFP 2007 - Duration: Sep 19 2007 → Sep 21 2007

Other

Other	2007 4th International Conference on Group IV Photonics, GFP 2007
Period	9/19/07 → 9/21/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{831c9123a05f49da86f1b5e2a381c656,

title = "Advances in Si-Ge-Sn materials science and technology",

abstract = "SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.",

author = "John Kouvetakis and John Tolle and Jose Menendez and D'Costa, {V. R.}",

year = "2007",

language = "English (US)",

pages = "201--203",

booktitle = "IEEE International Conference on Group IV Photonics GFP",

note = "2007 4th International Conference on Group IV Photonics, GFP 2007 ; Conference date: 19-09-2007 Through 21-09-2007",

}

TY - GEN

T1 - Advances in Si-Ge-Sn materials science and technology

AU - Kouvetakis, John

AU - Tolle, John

AU - Menendez, Jose

AU - D'Costa, V. R.

PY - 2007

Y1 - 2007

N2 - SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.

AB - SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.

UR - http://www.scopus.com/inward/record.url?scp=78649831876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649831876&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:78649831876

SP - 201

EP - 203

BT - IEEE International Conference on Group IV Photonics GFP

T2 - 2007 4th International Conference on Group IV Photonics, GFP 2007

Y2 - 19 September 2007 through 21 September 2007

ER -

Advances in Si-Ge-Sn materials science and technology

Abstract

Other

ASJC Scopus subject areas

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