This paper studies the potential of wide bandgap tunnel junctions such as AlGaAs/GaAs and GaAs/GaAs configurations for multi - junction solar cells. Simulations were performed to study the dominant physical mechanisms in tunnel junctions such as band to band tunneling and trap assisted tunneling. 1-D Drift Diffusion simulations were performed to determine the different regions in the I-V characteristics, namely, the tunneling current, excess current and classical diffusion current. We outline the implementation of local and non-local tunneling models to understand the nature of peak current. The variation of peak voltage is examined with the addition of band gap narrowing and different effective masses.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Print)9781479932993
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL


  • Heterojunctions
  • III-V Semiconducting Materials
  • Numerical Simulation
  • Resonant Tunneling Devices
  • Tunneling

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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