Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs

Shawn M. O'Rourke; Sameer M. Venugopal; Gregory Raupp; David Allee; Scott Ageno; Edward J. Bawolek; Douglas E. Loy; Jann P. Kaminski; Curt Moyer; Barry O'Brien; Ke Long; Michael Marrs; Dirk Bottesch; Jeff Dailey; Jovan Trujillo; Rita Cordova; Mark Richards; Daniel Toy; Nicholas Colaneri

Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs

Shawn M. O'Rourke, Sameer M. Venugopal, Gregory Raupp, David Allee, Scott Ageno, Edward J. Bawolek, Douglas E. Loy, Jann P. Kaminski, Curt Moyer, Barry O'Brien, Ke Long, Michael Marrs, Dirk Bottesch, Jeff Dailey, Jovan Trujillo, Rita Cordova, Mark Richards, Daniel Toy, Nicholas Colaneri

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

A low temperature, 180°C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm ²/V-sec, median drive currents of 26.2 μA and low defectivity.

Original language	English (US)
Title of host publication	Digest of Technical Papers - SID International Symposium
Pages	422-424
Number of pages	3
Volume	39
Edition	1
State	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: May 20 2008 → May 21 2008

Other

Other	2008 SID International Symposium
Country/Territory	United States
City	Los Angeles, CA
Period	5/20/08 → 5/21/08

ASJC Scopus subject areas

General Engineering

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O'Rourke, S. M., Venugopal, S. M., Raupp, G., Allee, D., Ageno, S., Bawolek, E. J., Loy, D. E., Kaminski, J. P., Moyer, C., O'Brien, B., Long, K., Marrs, M., Bottesch, D., Dailey, J., Trujillo, J., Cordova, R., Richards, M., Toy, D., & Colaneri, N. (2008). Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs. In Digest of Technical Papers - SID International Symposium (1 ed., Vol. 39, pp. 422-424)

O'Rourke, SM, Venugopal, SM, Raupp, G , Allee, D, Ageno, S, Bawolek, EJ, Loy, DE, Kaminski, JP, Moyer, C, O'Brien, B, Long, K, Marrs, M, Bottesch, D, Dailey, J, Trujillo, J, Cordova, R, Richards, M, Toy, D & Colaneri, N 2008, Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs. in Digest of Technical Papers - SID International Symposium. 1 edn, vol. 39, pp. 422-424, 2008 SID International Symposium, Los Angeles, CA, United States, 5/20/08.

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title = "Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs",

abstract = "A low temperature, 180°C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm 2/V-sec, median drive currents of 26.2 μA and low defectivity.",

author = "O'Rourke, {Shawn M.} and Venugopal, {Sameer M.} and Gregory Raupp and David Allee and Scott Ageno and Bawolek, {Edward J.} and Loy, {Douglas E.} and Kaminski, {Jann P.} and Curt Moyer and Barry O'Brien and Ke Long and Michael Marrs and Dirk Bottesch and Jeff Dailey and Jovan Trujillo and Rita Cordova and Mark Richards and Daniel Toy and Nicholas Colaneri",

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language = "English (US)",

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T2 - 2008 SID International Symposium

AU - O'Rourke, Shawn M.

AU - Venugopal, Sameer M.

AU - Raupp, Gregory

AU - Allee, David

AU - Ageno, Scott

AU - Bawolek, Edward J.

AU - Loy, Douglas E.

AU - Kaminski, Jann P.

AU - Moyer, Curt

AU - O'Brien, Barry

AU - Long, Ke

AU - Marrs, Michael

AU - Bottesch, Dirk

AU - Dailey, Jeff

AU - Trujillo, Jovan

AU - Cordova, Rita

AU - Richards, Mark

AU - Toy, Daniel

AU - Colaneri, Nicholas

PY - 2008

Y1 - 2008

N2 - A low temperature, 180°C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm 2/V-sec, median drive currents of 26.2 μA and low defectivity.

AB - A low temperature, 180°C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm 2/V-sec, median drive currents of 26.2 μA and low defectivity.

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M3 - Conference contribution

AN - SCOPUS:55149097953

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EP - 424

BT - Digest of Technical Papers - SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs

Abstract

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ASJC Scopus subject areas

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