Activated strain relief of Ge/Si(100) islands

Jeffery Drucker; Yangting Zhang; S. A. Chaparro; D. Chandrasekhar; Martha McCartney; David Smith

doi:10.1016/S0218-625X(00)00053-1

Activated strain relief of Ge/Si(100) islands

Jeffery Drucker, Yangting Zhang, S. A. Chaparro, D. Chandrasekhar, Martha McCartney, David Smith

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature, T. Si interdiffusion for T ≥ 550°C forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T ≥ 600°C.

Original language	English (US)
Pages (from-to)	527-531
Number of pages	5
Journal	Surface Review and Letters
Volume	7
Issue number	5-6
DOIs	https://doi.org/10.1016/S0218-625X(00)00053-1
State	Published - 2000

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0218-625X(00)00053-1

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title = "Activated strain relief of Ge/Si(100) islands",

abstract = "Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature, T. Si interdiffusion for T ≥ 550°C forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T ≥ 600°C.",

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T1 - Activated strain relief of Ge/Si(100) islands

AU - Drucker, Jeffery

AU - Zhang, Yangting

AU - Chaparro, S. A.

AU - Chandrasekhar, D.

AU - McCartney, Martha

AU - Smith, David

PY - 2000

Y1 - 2000

N2 - Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature, T. Si interdiffusion for T ≥ 550°C forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T ≥ 600°C.

AB - Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature, T. Si interdiffusion for T ≥ 550°C forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T ≥ 600°C.

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VL - 7

SP - 527

EP - 531

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 5-6

ER -

Activated strain relief of Ge/Si(100) islands

Abstract

ASJC Scopus subject areas

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