Activated strain relief of Ge/Si(100) islands

Jeffery Drucker, Yangting Zhang, S. A. Chaparro, D. Chandrasekhar, Martha McCartney, David Smith

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature, T. Si interdiffusion for T ≥ 550°C forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T ≥ 600°C.

Original languageEnglish (US)
Pages (from-to)527-531
Number of pages5
JournalSurface Review and Letters
Issue number5-6
StatePublished - Dec 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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