Acoustic phonon scattering in silicon quantum dots

Manfred Dür; Allen D. Gunther; Dragica Vasileska; Stephen Goodnick

doi:10.1088/0957-4484/10/2/307

Acoustic phonon scattering in silicon quantum dots

Manfred Dür, Allen D. Gunther, Dragica Vasileska, Stephen Goodnick

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Intravalley acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a (100) surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO₂ interface is modelled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-acoustic-phonon interaction strongly affects the scattering rate and the average scattering angle. The calculated transition rate of electrons from the first excited state to the ground state shows a strong dependence on spatial confinement and lattice temperature, with the longitudinal phonon mode giving the main contribution to the total rate.

Original language	English (US)
Pages (from-to)	142-146
Number of pages	5
Journal	Nanotechnology
Volume	10
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/10/2/307
State	Published - Jun 1 1999

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Acoustic phonon scattering in silicon quantum dots",

abstract = "Intravalley acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a (100) surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO2 interface is modelled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-acoustic-phonon interaction strongly affects the scattering rate and the average scattering angle. The calculated transition rate of electrons from the first excited state to the ground state shows a strong dependence on spatial confinement and lattice temperature, with the longitudinal phonon mode giving the main contribution to the total rate.",

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T1 - Acoustic phonon scattering in silicon quantum dots

AU - Dür, Manfred

AU - Gunther, Allen D.

AU - Vasileska, Dragica

AU - Goodnick, Stephen

PY - 1999/6/1

Y1 - 1999/6/1

N2 - Intravalley acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a (100) surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO2 interface is modelled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-acoustic-phonon interaction strongly affects the scattering rate and the average scattering angle. The calculated transition rate of electrons from the first excited state to the ground state shows a strong dependence on spatial confinement and lattice temperature, with the longitudinal phonon mode giving the main contribution to the total rate.

AB - Intravalley acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a (100) surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO2 interface is modelled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-acoustic-phonon interaction strongly affects the scattering rate and the average scattering angle. The calculated transition rate of electrons from the first excited state to the ground state shows a strong dependence on spatial confinement and lattice temperature, with the longitudinal phonon mode giving the main contribution to the total rate.

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SP - 142

EP - 146

JO - Nanotechnology

JF - Nanotechnology

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Acoustic phonon scattering in silicon quantum dots

Abstract

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