Abnormal band bowing effects in phase instability crossover region of GaSe1-x Te x nanomaterials /639/301 /639/301/357/1018 /639/925/357/1018 /123 /128 /119 /147/143 /147/135 /140/133 article

Hui Cai, Bin Chen, Mark Blei, Lan-Yun Chang, Kedi Wu, Houlong Zhuang, Sefaattin Tongay

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Akin to the enormous number of discoveries made through traditional semiconductor alloys, alloying selected 2D semiconductors enables engineering of their electronic structure for a wide range of new applications. 2D alloys have been demonstrated when two components crystallized in the same phase, and their bandgaps displayed predictable monotonic variation. By stabilizing previously unobserved compositions and phases of GaSe1-x Te x at nanoscales on GaAs(111), we demonstrate abnormal band bowing effects and phase instability region when components crystallize in different phases. Advanced microscopy and spectroscopy measurements show as tellurium is alloyed into GaSe, nanostructures undergo hexagonal to monoclinic and isotropic to anisotropic transition. There exists an instability region (0.56 < x < 0.67) where both phases compete and coexist, and two different bandgap values can be found at the same composition leading to anomalous band bowing effects. Results highlight unique alloying effects, not existing in single-phase alloys, and phase engineering routes for potential applications in photonic and electronics.

Original languageEnglish (US)
Article number1927
JournalNature communications
Issue number1
StatePublished - Dec 1 2018

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Abnormal band bowing effects in phase instability crossover region of GaSe1-x Te x nanomaterials /639/301 /639/301/357/1018 /639/925/357/1018 /123 /128 /119 /147/143 /147/135 /140/133 article'. Together they form a unique fingerprint.

Cite this