@inproceedings{b15617e7a77449ad8a7a1d85609e39c0,
title = "A V-band Differential SiGe VCO with varactor-less tuning",
abstract = "A SiGe V-band voltage-controlled oscillator (VCO) with varactor-less tuning is presented. The frequency tuning of the VCO is accomplished using the C CB capacitance of the core transistors themselves. Removing the varactors within the VCO is particularly useful for millimeter-wave applications since varactors significantly degrade the quality factor of the resonator within the VCO and consequently the phase noise. This VCO utilizes a differential cross-coupled topology. The 67 GHz VCO was implemented in a commercial 180 nm SiGe BiCMOS platform and achieves a 6.7% tuning range and 0.3 dBm differential output power. The VCO achieves 90 dBC/Hz phase noise at 1 MHz offset from the 67 GHz signal.",
keywords = "Millimeter-Wave, RF circuits, Silicon bipolar/BiCMOS process technology, Tuning range, VCO",
author = "Saeed Zeinolabedinzadeh and Lourenco, {Nelson E.} and M. Kamarei and Cressler, {John D.}",
year = "2012",
month = dec,
day = "12",
doi = "10.1109/BCTM.2012.6352656",
language = "English (US)",
isbn = "9781467330206",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
booktitle = "2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012",
note = "2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012 ; Conference date: 30-09-2012 Through 03-10-2012",
}