Abstract
A novel multi -band LNA, which can switch between standards GSM800MHz/GSM1.8GHz or GSM800MHz/WCDMA2.1GHz, is presented. The LNA provides 22.4dB gain at 800MHz and 14.1 dB at 1.8GHz. The device selects between GSM1.8GHz/WCDMA2.1GHz by means of a simple PMOS switch. The LNA is fabricated in 0.18μm technology using only CMOS transistors. Post-Layout simulation results indicate a Noise Figure below 1.6dB in all bands while drawing 8.5mA from a 1.8V power supply. To save die area, the input matching circuit is partially off-chip.
Original language | English (US) |
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Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
Editors | H. Thal |
Volume | 1 |
State | Published - 2003 |
Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: Jun 8 2003 → Jun 13 2003 |
Other
Other | 2003 IEEE MTT-S International Microwave Symposium Digest |
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Country/Territory | United States |
City | Philadelphia, PA |
Period | 6/8/03 → 6/13/03 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering