A pinned photodiode analytic model enabling opto-electronic circuit simulation

Haifeng Zhu; Min Shi; Yanmei Su; Xiaojin Zhao; Qin Chen; Cao Yu; Jin He; Hao Wang; Yun Ye; Hongyu He

doi:10.1166/jctn.2014.3353

A pinned photodiode analytic model enabling opto-electronic circuit simulation

Haifeng Zhu, Min Shi, Yanmei Su, Xiaojin Zhao, Qin Chen, Cao Yu, Jin He, Hao Wang, Yun Ye, Hongyu He

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

Original language	English (US)
Pages (from-to)	313-317
Number of pages	5
Journal	Journal of Computational and Theoretical Nanoscience
Volume	11
Issue number	2
DOIs	https://doi.org/10.1166/jctn.2014.3353
State	Published - Feb 2014
Externally published	Yes

Keywords

CMOS Image Sensor
Drift-Diffussion Model
Pinned Photodiode

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Computational Mathematics
Electrical and Electronic Engineering

Access to Document

10.1166/jctn.2014.3353

Cite this

@article{c626448d40c7425bb0c9f3de9ee8d339,

title = "A pinned photodiode analytic model enabling opto-electronic circuit simulation",

abstract = "An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.",

keywords = "CMOS Image Sensor, Drift-Diffussion Model, Pinned Photodiode",

author = "Haifeng Zhu and Min Shi and Yanmei Su and Xiaojin Zhao and Qin Chen and Cao Yu and Jin He and Hao Wang and Yun Ye and Hongyu He",

year = "2014",

month = feb,

doi = "10.1166/jctn.2014.3353",

language = "English (US)",

volume = "11",

pages = "313--317",

journal = "Journal of Computational and Theoretical Nanoscience",

issn = "1546-1955",

publisher = "American Scientific Publishers",

number = "2",

}

TY - JOUR

T1 - A pinned photodiode analytic model enabling opto-electronic circuit simulation

AU - Zhu, Haifeng

AU - Shi, Min

AU - Su, Yanmei

AU - Zhao, Xiaojin

AU - Chen, Qin

AU - Yu, Cao

AU - He, Jin

AU - Wang, Hao

AU - Ye, Yun

AU - He, Hongyu

PY - 2014/2

Y1 - 2014/2

N2 - An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

AB - An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

KW - CMOS Image Sensor

KW - Drift-Diffussion Model

KW - Pinned Photodiode

UR - http://www.scopus.com/inward/record.url?scp=84892379659&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892379659&partnerID=8YFLogxK

U2 - 10.1166/jctn.2014.3353

DO - 10.1166/jctn.2014.3353

M3 - Article

AN - SCOPUS:84892379659

SN - 1546-1955

VL - 11

SP - 313

EP - 317

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

IS - 2

ER -

A pinned photodiode analytic model enabling opto-electronic circuit simulation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this