A pinned photodiode analytic model enabling opto-electronic circuit simulation

Haifeng Zhu, Min Shi, Yanmei Su, Xiaojin Zhao, Qin Chen, Cao Yu, Jin He, Hao Wang, Yun Ye, Hongyu He

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

Original languageEnglish (US)
Pages (from-to)313-317
Number of pages5
JournalJournal of Computational and Theoretical Nanoscience
Issue number2
StatePublished - Feb 2014
Externally publishedYes


  • CMOS Image Sensor
  • Drift-Diffussion Model
  • Pinned Photodiode

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Computational Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'A pinned photodiode analytic model enabling opto-electronic circuit simulation'. Together they form a unique fingerprint.

Cite this