A new method for bulk passivation in multicrystalline-Si by sulfur

Arunodoy Saha, Haifeng Zhang, Wen Cheng Sun, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


A new bulk passivation method for multicrystalline-Si using H2S is proposed. It has the added benefit of both hydrogen and sulfur for bulk passivation. Minority carrier lifetime of the samples is measured to monitor the effect of passivation. It is found that sulfur passivation takes place at higher temperatures, ∼100°C higher, than hydrogen passivation, and sulfur passivation results in much higher lifetime gains than hydrogen passivation (2750% vs. 359%). Post-annealing in ambient further improves the lifetime of the samples, which is attributed to improved surface passivation on the p-type samples by Al2O3. The highest lifetime gain achieved is 6750% for H2S passivated samples vs. ∼2400% for forming gas passivated samples. Post-annealing also improves the stability of the increased lifetime.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015


Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans


  • bulk passivation
  • grain boundary passivation
  • hydrogen
  • multicrystalline silicon
  • sulfur

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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