Abstract
We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully-erased devices of 350 nm to 1 μm in diameter transitioned from a high resistance state in excess of 100 MΩ to their on state at 1.3 V or less, and the erase was initiated below -0.5V. The on resistance was a function of programming current and a range of approximately 2 MΩ to below 300 D was demonstrated. Switching was possible using 3V pulses of 1 μs duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 μA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 10 7 cycles.
Original language | English (US) |
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Title of host publication | 7th Annual Non-Volatile Memory Technology Symposium, NVMTS |
Pages | 104-110 |
Number of pages | 7 |
State | Published - 2006 |
Event | 7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States Duration: Nov 5 2006 → Nov 8 2006 |
Other
Other | 7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 |
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Country/Territory | United States |
City | San Mateo, CA |
Period | 11/5/06 → 11/8/06 |
Keywords
- Copper doping
- Electrodeposition
- Non-volatile memory
- Resistance change
- Silicon oxide
- Solid electrolyte
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering