A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications

Christopher Coen, Saeed Zeinolabedinzadeh, Mehmet Kaynak, Bernd Tillack, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

28 Scopus citations

Abstract

This paper presents a 138-170 GHz active frequency doubler implemented in a 0.13 μm SiGe BiCMOS technology with a peak output power of 5.6 dBm and peak power-added efficiency of 7.6%. The doubler achieves a peak conversion gain of 4.9 dB and consumes only 36 mW of DC power at peak drive through the use of a push-push frequency doubling stage optimized for low drive power, along with a low-power output buffer. To the best of our knowledge, this doubler achieves the highest output power, efficiency, and fundamental frequency suppression of all D-band and G-band SiGe HBT frequency doublers to date.

Original languageEnglish (US)
Title of host publicationRFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium
EditorsSrenik Mehta, Li Lin
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-26
Number of pages4
ISBN (Electronic)9781467386500
DOIs
StatePublished - Jul 8 2016
Externally publishedYes
Event2016 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2016 - San Francisco, United States
Duration: May 22 2016May 24 2016

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume2016-July
ISSN (Print)1529-2517

Other

Other2016 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2016
Country/TerritoryUnited States
CitySan Francisco
Period5/22/165/24/16

Keywords

  • D-band
  • SiGe HBT
  • frequency doubler
  • frequency multiplier
  • millimeter-wave integrated circuits

ASJC Scopus subject areas

  • General Engineering

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