Abstract
We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.
Original language | English (US) |
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Pages (from-to) | 351-354 |
Number of pages | 4 |
Journal | Journal of Computational Electronics |
Volume | 3 |
Issue number | 3-4 |
DOIs | |
State | Published - Oct 2004 |
Keywords
- Ab-initio
- Alloys
- Device simulation
- Monte Carlo
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering