TY - GEN
T1 - A Comprehensive Design Procedure and Performance Evaluation of 200°C Non-Inverting Buck-Boost Converter using SiC MOSFET Bare Dies
AU - Dey, Saikat
AU - Mallik, Ayan
AU - Goldsman, Neil
N1 - Funding Information:
currents through the switches and inductor increase, leading This work is partly supported by CoolCAD Electronics LLC, to more conduction losses. Another important point to observe which is gratefully acknowledged. is that at 200°C ambient temperature, the converter efficiency degrades by 3-5% from its efficiency measured at 25°C, which is also suggested by the theorical loss model developed.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/10/13
Y1 - 2021/10/13
N2 - This paper presents the design and development of a Silicon Carbide (SiC) technology-based Non-Inverting Buck-Boost (NIBB) DC-DC power conversion unit for harsh space environment application with very high temperature (HT) (>150°C) and high radiation level. This work evaluates the capability of SiC bare dies for high temperature (>150°C) power electronics. The selection of critical passive components of the power converter is done through rigorous characterization of their performance metrics such as capacitance, inductance, leakage current, etc. under influence of increasing operating temperature. In this work, the design, prototype development, operation, and testing of a 100kHz, 100W NIBB DC-DC converter over the 25°-200° C ambient temperature range is demonstrated. The designed converter provides up to a 3.5A output load and convert the input side battery voltage levels of 28V, 120V, and 160V to a configurable output voltage from 30V to 48V, used as a standard for NASA space missions. The converter power stage, including the power semiconductor devices, inductor, and ceramic input and output filter capacitors, were placed inside a temperature controlled chamber for testing and temperature-variant characterization. The MOSFET gate drive circuit, input power source, and output load were placed external to the environmental chamber. Results at 200°C environment report a peak full load efficiency of 91.3%, which validates the developed converter architecture to be a suitable candidate for high-frequency HT power conversion.
AB - This paper presents the design and development of a Silicon Carbide (SiC) technology-based Non-Inverting Buck-Boost (NIBB) DC-DC power conversion unit for harsh space environment application with very high temperature (HT) (>150°C) and high radiation level. This work evaluates the capability of SiC bare dies for high temperature (>150°C) power electronics. The selection of critical passive components of the power converter is done through rigorous characterization of their performance metrics such as capacitance, inductance, leakage current, etc. under influence of increasing operating temperature. In this work, the design, prototype development, operation, and testing of a 100kHz, 100W NIBB DC-DC converter over the 25°-200° C ambient temperature range is demonstrated. The designed converter provides up to a 3.5A output load and convert the input side battery voltage levels of 28V, 120V, and 160V to a configurable output voltage from 30V to 48V, used as a standard for NASA space missions. The converter power stage, including the power semiconductor devices, inductor, and ceramic input and output filter capacitors, were placed inside a temperature controlled chamber for testing and temperature-variant characterization. The MOSFET gate drive circuit, input power source, and output load were placed external to the environmental chamber. Results at 200°C environment report a peak full load efficiency of 91.3%, which validates the developed converter architecture to be a suitable candidate for high-frequency HT power conversion.
KW - High Temperature Electronics
KW - SiC Bare Die
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U2 - 10.1109/IECON48115.2021.9589983
DO - 10.1109/IECON48115.2021.9589983
M3 - Conference contribution
AN - SCOPUS:85119475494
T3 - IECON Proceedings (Industrial Electronics Conference)
BT - IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society
PB - IEEE Computer Society
T2 - 47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021
Y2 - 13 October 2021 through 16 October 2021
ER -