@inproceedings{73c3fb937a1a4763b50f8f35fff1989a,
title = "A compact watt-level GaN-on-Si class AB power amplifier for handset applications",
abstract = "This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.",
keywords = "Class AB, GaN, HEMT, Linearity, Power Amplifier",
author = "Hasin, {Muhammad Ruhul} and Jennifer Kitchen",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 ; Conference date: 30-03-2017 Through 31-03-2017",
year = "2017",
month = oct,
day = "17",
doi = "10.1109/WMCaS.2017.8070682",
language = "English (US)",
series = "Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017",
}