A 10-W X-Band Class-F High-Power Amplifier in a 0.25-μm GaAs pHEMT Technology

Amirreza Alizadeh, Majid Yaghoobi, Masoud Meghdadi, Ali Medi, Sayfe Kiaei

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ \text{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to provide 39-40-dBm output power. The class-F HPA achieves a 10-W output power and a peak power added efficiency (PAE) of 63% for pulsed-mode operation with a pulse repetition frequency (PRF) of 1 kHz and a duty cycle of 10%. The measured peak output power and PAE in the continuous-wave (CW) operation are 9.3 W and 58%, respectively.

Original languageEnglish (US)
Article number9250592
Pages (from-to)157-169
Number of pages13
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number1
StatePublished - Jan 2021


  • Class-F
  • high-efficiency power amplifiers (PAs)
  • high-power amplifiers (HPAs)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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