TY - GEN
T1 - 40V MESFETs fabricated on 32nm SOI CMOS
AU - Lepkowski, William
AU - Wilk, Seth J.
AU - Kam, J.
AU - Thornton, Trevor
PY - 2013/11/7
Y1 - 2013/11/7
N2 - This article describes 40V N-channel MESFETs fabricated at a commercial 32nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. The 32nm technology node is the most advanced technology node to date for MESFET fabrication and builds upon previous work completed at other process nodes. High voltage MESFETs were measured with current drives of 110mA/mm. The devices are suitable for RF development and have peak cut-off frequency, fT, of 30.5GHz and maximum oscillation frequency, f max, of 34.5GHz.
AB - This article describes 40V N-channel MESFETs fabricated at a commercial 32nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. The 32nm technology node is the most advanced technology node to date for MESFET fabrication and builds upon previous work completed at other process nodes. High voltage MESFETs were measured with current drives of 110mA/mm. The devices are suitable for RF development and have peak cut-off frequency, fT, of 30.5GHz and maximum oscillation frequency, f max, of 34.5GHz.
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U2 - 10.1109/CICC.2013.6658399
DO - 10.1109/CICC.2013.6658399
M3 - Conference contribution
AN - SCOPUS:84892660303
SN - 9781467361460
T3 - Proceedings of the Custom Integrated Circuits Conference
BT - Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013
Y2 - 22 September 2013 through 25 September 2013
ER -