4-terminal Angelov model for SOI CMOS MESFETs

Seth J. Wilk; William Lepkowski; Payam Habibimehr; Trevor Thornton

doi:10.1109/RFIC.2015.7337779

4-terminal Angelov model for SOI CMOS MESFETs

Seth J. Wilk, William Lepkowski, Payam Habibimehr, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.

Original language	English (US)
Title of host publication	Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	359-362
Number of pages	4
Volume	2015-November
ISBN (Electronic)	9781479976416
DOIs	https://doi.org/10.1109/RFIC.2015.7337779
State	Published - Nov 25 2015
Event	IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 - Phoenix, United States Duration: May 17 2015 → May 19 2015

Other

Other	IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
Country/Territory	United States
City	Phoenix
Period	5/17/15 → 5/19/15

Keywords

MESFETs
silicon-on-insulator

ASJC Scopus subject areas

General Engineering

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10.1109/RFIC.2015.7337779

Cite this

4-terminal Angelov model for SOI CMOS MESFETs. / Wilk, Seth J.; Lepkowski, William; Habibimehr, Payam et al.
Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015. Vol. 2015-November Institute of Electrical and Electronics Engineers Inc., 2015. p. 359-362 7337779.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wilk, SJ, Lepkowski, W, Habibimehr, P & Thornton, T 2015, 4-terminal Angelov model for SOI CMOS MESFETs. in Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015. vol. 2015-November, 7337779, Institute of Electrical and Electronics Engineers Inc., pp. 359-362, IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015, Phoenix, United States, 5/17/15. https://doi.org/10.1109/RFIC.2015.7337779

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abstract = "This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.",

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AU - Wilk, Seth J.

AU - Lepkowski, William

AU - Habibimehr, Payam

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Y1 - 2015/11/25

N2 - This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.

AB - This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.

KW - MESFETs

KW - silicon-on-insulator

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M3 - Conference contribution

AN - SCOPUS:84975678135

VL - 2015-November

SP - 359

EP - 362

BT - Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015

Y2 - 17 May 2015 through 19 May 2015

ER -

4-terminal Angelov model for SOI CMOS MESFETs

Abstract

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Keywords

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