3D modeling of silicon quantum dots

S. N. Miličić, F. Badrieh, Dragica Vasileska, A. Gunther, Stephen Goodnick

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

Original languageEnglish (US)
Pages (from-to)377-382
Number of pages6
JournalSuperlattices and Microstructures
Issue number5
StatePublished - May 2000
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: Dec 6 1999Dec 10 1999

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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