2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

Durjoy Dev, Adithi Krishnaprasad, Mashiyat S. Shawkat, Zhezhi He, Sonali Das, Deliang Fan, Hee Suk Chung, Yeonwoong Jung, Tania Roy

Research output: Contribution to journalArticlepeer-review

69 Scopus citations


In this work, we use a two-terminal 2D MoS2-based memristive device to emulate an artificial neuron. The Au/MoS2/Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 106, originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.

Original languageEnglish (US)
Article number9069258
Pages (from-to)936-939
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 1 2020


  • 2D material
  • LIF neuron
  • MoS₂
  • SNN
  • TSM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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