2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells

Stanislau Herasimenka; Kunal Ghosh; Stuart Bowden; Christiana Honsberg

doi:10.1109/PVSC.2010.5614394

2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells

Stanislau Herasimenka, Kunal Ghosh, Stuart Bowden, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused by the S-shape behavior of experimental J-V curves of standard interdigitated back contact cells can be recovered by making small openings in the intrinsic buffer layer. The small openings in the buffer layer also substantially reduce the influence of the relative dimensions of the silicon strips as when compared to cells with a continuous buffer layer.

Original language	English (US)
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1390-1394
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614394
State	Published - Dec 20 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2010.5614394

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2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells. / Herasimenka, Stanislau; Ghosh, Kunal; Bowden, Stuart et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1390-1394 5614394 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Herasimenka, S, Ghosh, K, Bowden, S & Honsberg, C 2010, 2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614394, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1390-1394, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5614394

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abstract = "Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused by the S-shape behavior of experimental J-V curves of standard interdigitated back contact cells can be recovered by making small openings in the intrinsic buffer layer. The small openings in the buffer layer also substantially reduce the influence of the relative dimensions of the silicon strips as when compared to cells with a continuous buffer layer.",

author = "Stanislau Herasimenka and Kunal Ghosh and Stuart Bowden and Christiana Honsberg",

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Y1 - 2010/12/20

N2 - Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused by the S-shape behavior of experimental J-V curves of standard interdigitated back contact cells can be recovered by making small openings in the intrinsic buffer layer. The small openings in the buffer layer also substantially reduce the influence of the relative dimensions of the silicon strips as when compared to cells with a continuous buffer layer.

AB - Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused by the S-shape behavior of experimental J-V curves of standard interdigitated back contact cells can be recovered by making small openings in the intrinsic buffer layer. The small openings in the buffer layer also substantially reduce the influence of the relative dimensions of the silicon strips as when compared to cells with a continuous buffer layer.

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2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells

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