1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Calli M. Campbell; Yuan Zhao; Ernesto Suarez; Mathieu Boccard; Xin Hao Zhao; Zhao Yu He; Preston T. Webster; Maxwell B. Lassise; Shane Johnson; Zachary Holman; Yong-Hang Zhang

doi:10.1109/PVSC.2017.8366018

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Calli M. Campbell, Yuan Zhao, Ernesto Suarez, Mathieu Boccard, Xin Hao Zhao, Zhao Yu He, Preston T. Webster, Maxwell B. Lassise, Shane Johnson, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Mg_xCd_1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. Mg_xCd_1-xTe/MgyCd_1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type Mg_xCd_1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type Mg_xCd_1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3245-3249
Number of pages	5
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366018
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2017.8366018

Cite this

Campbell, C. M., Zhao, Y., Suarez, E., Boccard, M., Zhao, X. H., He, Z. Y., Webster, P. T., Lassise, M. B., Johnson, S., Holman, Z., & Zhang, Y-H. (2017). 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 3245-3249). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366018

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. / Campbell, Calli M.; Zhao, Yuan; Suarez, Ernesto et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 3245-3249 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Campbell, CM, Zhao, Y, Suarez, E, Boccard, M, Zhao, XH, He, ZY, Webster, PT, Lassise, MB, Johnson, S , Holman, Z & Zhang, Y-H 2017, 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 3245-3249, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366018

Campbell CM, Zhao Y, Suarez E, Boccard M, Zhao XH, He ZY et al. 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 3245-3249. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366018

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title = "1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications",

abstract = "MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.",

author = "Campbell, {Calli M.} and Yuan Zhao and Ernesto Suarez and Mathieu Boccard and Zhao, {Xin Hao} and He, {Zhao Yu} and Webster, {Preston T.} and Lassise, {Maxwell B.} and Shane Johnson and Zachary Holman and Yong-Hang Zhang",

note = "Funding Information: The authors gratefully acknowledge the use of the time-correlated single-photon-counting system in the Ultra-fast Laser Facility at the Arizona State University Biodesign Institute. This work was primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC‐1041895, and in part by the Air Force Office of Scientific Research under Grant FA9550-12-1-0444, the DOE/Bay Area Photovoltaic Consortium program under Award DEEE0004946, as well as by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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doi = "10.1109/PVSC.2017.8366018",

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AU - Campbell, Calli M.

AU - Zhao, Yuan

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AU - He, Zhao Yu

AU - Webster, Preston T.

AU - Lassise, Maxwell B.

AU - Johnson, Shane

AU - Holman, Zachary

AU - Zhang, Yong-Hang

N1 - Funding Information: The authors gratefully acknowledge the use of the time-correlated single-photon-counting system in the Ultra-fast Laser Facility at the Arizona State University Biodesign Institute. This work was primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC‐1041895, and in part by the Air Force Office of Scientific Research under Grant FA9550-12-1-0444, the DOE/Bay Area Photovoltaic Consortium program under Award DEEE0004946, as well as by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335. Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

AB - MgxCd1-xTe/Si tandem cells have the potential to reach a conversion efficiency greater than 40%. MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) grown by molecular beam epitaxy exhibit ∼1.7 eV bandgaps and very high absorption coefficients, as measured using photoluminescence (PL) and spectroscopic ellipsometry. Indium-doped n-type MgxCd1-xTe (x ∼ 13% Mg mole fraction) with a ∼1.7 eV bandgap shows strong PL, comparable to that from high-quality CdTe/MgCdTe double heterostructures. Devices consisting of an n-type MgxCd1-xTe DH absorber, a p-type hydrogenated amorphous silicon (a-Si:H) hole contact layer and an indium tin oxide (ITO) top electrode are demonstrated with promising performance.

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1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

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