100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li; Shuo Wang; Hanxiao Liu; Fernando Ponce; Theeradetch Detchprohm; Russell D. Dupuis

doi:10.1002/pssb.201600699

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li, Shuo Wang, Hanxiao Liu, Fernando Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH₃. A large growth efficiency of ∼2000 μm mol⁻¹ was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

Original language	English (US)
Article number	1600699
Journal	Physica Status Solidi (B) Basic Research
Volume	254
Issue number	8
DOIs	https://doi.org/10.1002/pssb.201600699
State	Published - Aug 2017

Keywords

BAlN
MOCVD
boron
phases
wurtzite

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.201600699

Cite this

@article{dd058406b6384df5a41f3f244bf10f27,

title = "100-nm thick single-phase wurtzite BAlN films with boron contents over 10%",

abstract = "Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.",

keywords = "BAlN, MOCVD, boron, phases, wurtzite",

author = "Xiaohang Li and Shuo Wang and Hanxiao Liu and Fernando Ponce and Theeradetch Detchprohm and Dupuis, {Russell D.}",

note = "Funding Information: This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories. Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

month = aug,

doi = "10.1002/pssb.201600699",

language = "English (US)",

volume = "254",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

AU - Li, Xiaohang

AU - Wang, Shuo

AU - Liu, Hanxiao

AU - Ponce, Fernando

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

N1 - Funding Information: This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories. Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2017/8

Y1 - 2017/8

N2 - Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

AB - Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

KW - BAlN

KW - MOCVD

KW - boron

KW - phases

KW - wurtzite

UR - http://www.scopus.com/inward/record.url?scp=85026893372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026893372&partnerID=8YFLogxK

U2 - 10.1002/pssb.201600699

DO - 10.1002/pssb.201600699

M3 - Article

AN - SCOPUS:85026893372

SN - 0370-1972

VL - 254

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 8

M1 - 1600699

ER -

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this