@inproceedings{15bfd9387f884ea7b420d71aaf1c7a83,
title = "1-eV GaNAsSb for multijunction solar cells",
abstract = "We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electronic and optical properties of the layers were probed using photoluminescence and photoreflectance spectroscopy and compared to the band anticrossing model. The incorporation mechanism of the group-V elements were investigated using secondary ion mass spectrometry. It was found that Sb does not affect the N incorporation. Moreover increasing the N flux increased the N composition at the expense of the Sb composition. Post-growth annealing was investigated and found to greatly improve the photoluminescence intensity.",
keywords = "Molecular beam epitaxy, Photovoltaic cell, Semiconductor epitaxial layer, Solar cell",
author = "Aymeric Maros and Nikolai Faleev and Lee, {Seung Hyun} and Kim, {Jong Su} and Christiana Honsberg and Richard King",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366527",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "370--372",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}