Research output per year
Research output per year
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Dive into the research topics where Houqiang Fu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications
Fu, K., Luo, S., Fu, H., Hatch, K., Alugubelli, S. R., Liu, H., Li, T., Xu, M., Mei, Z., He, Z., Zhou, J., Chang, C., Ponce, F. A., Nemanich, R. & Zhao, Y., Mar 1 2024, In: IEEE Transactions on Electron Devices. 71, 3, p. 1641-1645 5 p.Research output: Contribution to journal › Article › peer-review
7 Scopus citations -
High-performance GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric
Huang, Q., Deng, X., Zhang, L., Lin, W., Cheng, W., Yu, G., Ju, T., Mudiyanselage, D. H., Wang, D., Fu, H., Zeng, Z., Zhang, B. & Xu, F., Jun 3 2024, In: Applied Physics Letters. 124, 23, 233510.Research output: Contribution to journal › Article › peer-review
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High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
Herath Mudiyanselage, D., Wang, D., Da, B., He, Z. & Fu, H., Jan 1 2024, In: Applied Physics Express. 17, 1, 014005.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Instability of On-Resistance in Vertical GaN PIN Diodes under High-Temperature and Voltage Stress
Wang, D., Mudiyanselage, D. H., He, Z., Da, B. & Fu, H., Mar 1 2024, In: IEEE Transactions on Electron Devices. 71, 3, p. 1681-1686 6 p.Research output: Contribution to journal › Article › peer-review
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Low-power MoS2 metal-semiconductor field effect transistors (MESFETs) based on standard metal-semiconductor contact
Yang, C., Jiang, C., Niu, W., Hao, D., Huang, H., Fu, H., Miao, J., Liu, X., Zou, X., Shan, F. & Yang, Z., Feb 12 2024, In: Applied Physics Letters. 124, 7, 073504.Research output: Contribution to journal › Article › peer-review
2 Scopus citations
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CAREER: Ultrawide Bandgap Aluminum Nitride FETs for Power Electronics
Fu, H. (PI)
National Science Foundation (NSF)
6/1/24 → 5/31/29
Project: Research project
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GaN High Electron Mobility Transistors (HEMTs) based Power Integrated Circuits for Efficient Power Conversions
Fu, H. (PI)
4/1/23 → 3/31/25
Project: Research project
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Reliability Study and Failure Analysis of Wide Bandgap GaN Vertical Power Devices: From Materials to Devices
Fu, H. (PI)
National Science Foundation (NSF)
10/1/22 → 8/31/25
Project: Research project
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Stimulated Brillouin Scattering with Visible Integrated Photonics
Fu, H. (PI)
DOD-ARMY-ARL: Army Research Office (ARO)
8/1/21 → 7/31/24
Project: Research project
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Ultra Materials for a Resilient, Smart Electricity Grid
Goodnick, S. (CoI), Saraniti, M. (CoI), Singh, A. (CoI), Ponce, F. (CoI), Smith, D. (CoI), Nemanich, R. (PI) & Fu, H. (CoI)
8/1/20 → 7/31/24
Project: Research project