Material Science
Film
100%
Sapphire
72%
Transmission Electron Microscopy
72%
Density
69%
Surface (Surface Science)
63%
Epitaxy
59%
Aluminum Nitride
59%
Luminescence
58%
Quantum Well
58%
Silicon
56%
Gallium Arsenide
51%
Cathodoluminescence
48%
Chemical Vapor Deposition
45%
Heterojunction
45%
Phase Composition
42%
Epilayers
40%
Indium
37%
Thin Films
36%
Optical Property
35%
Crystal Defect
35%
Gallium Nitride
33%
Nitride Compound
27%
Dislocation (Crystal)
26%
Epitaxial Film
26%
Light-Emitting Diode
26%
Photoluminescence
25%
High-Resolution Transmission Electron Microscopy
25%
Molecular Beam Epitaxy
22%
Vapor Phase Epitaxy
21%
Nucleation
21%
Gallium
18%
Buffer Layer
17%
Annealing
16%
Solar Cell
16%
Burger Vector
15%
Single Crystal
15%
Superlattice
15%
Nanostructure
15%
Crystal Structure
14%
Piezoelectricity
14%
Electron Microscopy
14%
Crystallite
14%
Surface Morphology
14%
Quantum Dot
14%
Convergent Beam Electron Diffraction
12%
Atomic Force Microscopy
11%
Platelet
11%
Scanning Electron Microscopy
11%
Nitride Semiconductor
11%
Electronic Property
11%
Keyphrases
Aluminum Gallium Nitride (AlGaN)
74%
Indium Gallium Nitride (InGaN)
70%
Metal-organic Chemical Vapor Deposition (MOCVD)
67%
Transmission Electron Microscopy
59%
Dislocation
55%
InGaN Quantum Wells
52%
Gallium Arsenide
50%
Luminescence
49%
Sapphire Substrate
46%
Cathodoluminescence
43%
Optical Properties
42%
Electron Holography
36%
Quantum Well
36%
Microstructure
32%
Sapphire
31%
Molecular Beam Epitaxy
30%
Heterostructure
29%
Epitaxy
27%
Epilayer
27%
Misfit Dislocation
26%
Low Temperature
26%
P-GaN
25%
Gallium Nitride
24%
Threading Dislocation
24%
Multiple Quantum Wells
24%
Room Temperature
24%
Stacking Faults
23%
Epitaxial Growth
23%
High-resolution Transmission Electron Microscopy (HRTEM)
22%
Epitaxial
21%
GaN Films
20%
AlGaN-GaN
19%
Mg-doped GaN
19%
III-nitrides
19%
Metal Organic Vapor Phase Epitaxy (MOVPE)
19%
Gallium
19%
Light-emitting Diodes
19%
Misfit Strain
18%
High Temperature
18%
Electrostatic Potential
18%
Basal Plane
18%
Solar Cell
17%
InAlN
17%
Epitaxial Layers
16%
Si(111)
16%
Cadmium Telluride
16%
Annealing
16%
Optically Pumped
16%
Surface Morphology
16%
AlxGa1-xN
15%
Engineering
Quantum Well
83%
Chemical Vapor Deposition
35%
Vapor Deposition
34%
Gallium Arsenide
31%
Nitride
31%
Heterostructures
31%
Light-Emitting Diode
27%
Dislocation Density
26%
Threading Dislocation
25%
Sapphire Substrate
25%
Low-Temperature
25%
Thin Films
24%
Band Gap
24%
Solar Cell
23%
High Resolution
22%
Heterojunctions
21%
Room Temperature
20%
Phase Composition
16%
Superlattice
16%
Active Region
16%
Flat Surface
15%
Epitaxial Film
15%
Bragg Cell
14%
Two Dimensional
13%
Interlayer
12%
Electrostatic Potential
12%
Metal Organic Chemical Vapor Deposition
11%
Misfit Dislocation
11%
Electric Field
11%
Nanomaterial
10%
Buffer Layer
10%
Strain Relaxation
10%
Basal Plane
10%
Quantum Dot
9%
Ray Diffraction
9%
Emitting Laser
9%
Piezoelectric
9%
Crystal Structure
9%
Cavity Surface
8%
Spatial Variation
8%
Surface Morphology
8%
Convergent Beam Electron Diffraction
8%
Temperature Dependence
8%
Stimulated Emission
8%
Based Solar Cell
8%
Deep Level
8%
Early Stage
8%
Energy Electron
8%
Reflectance
8%
Indium Content
7%
